Mosfet Transistors

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The MM74HC273 edge triggered flip-flops utilize advanced silicon-gate CMOS technology to implement D-type flipflops. They possess high noise immunity, low power, and speeds comparable to low power Schottky TTL circuits. This device contains 8 master-slave flip-flops with a common clock and common clear. Data on the D input having the specified setup and hold times is transferred to the Q output on the LOW-to-HIGH transition of the CLOCK input. The CLEAR input when LOW, sets all outputs to a low state.The MM74HC273 edge triggered flip-flops utilize advancedsilicon-gate CMOS technology to implement D-type flip-flops. They possess high noise immunity, low power, andspeeds comparable to low power Schottky TTL circuits.This device contains 8 master-slave flip-flops with a com-mon clock and common clear. Data on the D input havingthe specified setup and hold times is transferred to the Qoutput on the LOW-to-HIGH transition of the CLOCK input.The CLEAR input when LOW, sets all outputs to a lowstate.Each output can drive 10 low power Schottky TTL equiva-lent loads. The MM74HC273 is functionally as well as pincompatible to the 74LS273. All inputs are protected fromdamage due to static discharge by diodes to VCC andgroundThe MM74HC273 edge triggered flip-flops utilize advancedsilicon-gate CMOS technology to implement D-type flip-flops. They possess high noise immunity, low power, andspeeds comparable to low power Schottky TTL circuits.This device contains 8 master-slave flip-flops with a com-mon clock and common clear. Data on the D input havingthe specified setup and hold times is transferred to the Qoutput on the LOW-to-HIGH transition of the CLOCK input.The CLEAR input when LOW, sets all outputs to a lowstate.Each output can drive 10 low power Schottky TTL equiva-lent loads. The MM74HC273 is functionally as well as pincompatible to the 74LS273. All inputs are protected fromdamage due to static discharge by diodes to VCC andground

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GT40J121 TO247  TOSHIBA 

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The part number 041N60 refers to the FCH041N60F, a Fairchild SUPERFET II, FRFET MOSFET. This is an N-channel, 600V, 76A MOSFET, designed for high performance switching applications. It utilizes charge balance technology for low on-resistance and low gate charge. It's commonly used in power supplies like those for servers, telecom, TVs, and industrial applications. 

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220N25 TO220 INFENION

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Triacs 25 Amp 800 Volt

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IGBTs 650V40A FS4 IGBT TO-247LL

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The 30N60A4D is a Fairchild (now part of ON Semiconductor) N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-frequency, high-voltage switching applications with low conduction losses. It combines the advantages of MOSFETs and bipolar transistors, offering low on-state resistance and high input impedance. This IGBT is particularly suitable for high-frequency switch-mode power supplies. 

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